Colloque - Anaïs Dréau : Single Color Centers for Silicon-Based Quantum Technologies
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Colloque - Anaïs Dréau : Single Color Centers for Silicon-Based Quantum Technologies
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Summary
Pascale Senellart
Chaire annuelle Innovation technologique Liliane Bettencourt (2025-2026)
Collège de France
Année 2025-2026
Colloque : Light-based Quantum Technologies
Pascale Senellart, chaire Innovation technologique Liliane Bettencourt
Colloque - Anaïs Dréau : Single Color Centers for Silicon-Based Quantum Technologies
Anaïs Dréau
Résumé
Capitalizing on the success of the microelectronics and integrated photonics industries, silicon is the material that has generated the most scientific interest for quantum technologies and offers currently the greatest diversity of integrated quantum systems. Recently, in 2020, a new type of physical systems in silicon has emerged for quantum applications: individual color centers. These fluorescent point defects can be isolated at single defect-scale using low-temperature confocal microscopy, and emit single photons directly at telecom wavelengths, suitable for long-distance propagations in optical fibers. Furthermore, some of these defects are also coupled to an optically detectable electron spin that could be used to store and process quantum information.